STGW30V60DF

Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW30V60DF - IGBT, 60 A, 1.85 V, 258 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.85V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 258W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: V
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C

Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W

Виробник: STMicroelectronics
IGBTs 600V 30A High Speed Trench Gate IGBT