Технічний опис STGW35HF60WDI STMicroelectronics
Description: IGBT 600V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 30ns/175ns, Switching Energy: 185µJ (off), Test Condition: 390V, 20A, 10Ohm, 15V, Gate Charge: 140 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 200 W.
Інші пропозиції STGW35HF60WDI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STGW35HF60WDI | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 60A 200W 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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STGW35HF60WDI | Виробник : STMicroelectronics |
Description: IGBT 600V 60A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 85 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 30ns/175ns Switching Energy: 185µJ (off) Test Condition: 390V, 20A, 10Ohm, 15V Gate Charge: 140 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 200 W |
товару немає в наявності |
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STGW35HF60WDI | Виробник : STMicroelectronics |
IGBT Transistors 35 A 600 V Ultra fast IGBT |
товару немає в наявності |