Технічний опис STGW50HF60S STM
Description: IGBT 600V 110A TO-247-3, Power - Max: 284 W, Current - Collector Pulsed (Icm): 130 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 110 A, Gate Charge: 200 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 250µJ (on), 4.2mJ (off), Td (on/off) @ 25°C: 50ns/220ns, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STGW50HF60S
| Фото | Назва | Виробник | Інформація |
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STGW50HF60S | Виробник : STMicroelectronics |
Description: IGBT 600V 110A TO-247-3 Power - Max: 284 W Current - Collector Pulsed (Icm): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 110 A Gate Charge: 200 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 250µJ (on), 4.2mJ (off) Td (on/off) @ 25°C: 50ns/220ns Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
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STGW50HF60S | Виробник : STMicroelectronics |
 IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces |
товару немає в наявності |