STGW50HF60S STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT 600V 110A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 50ns/220ns
Switching Energy: 250µJ (on), 4.2mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 284 W
Description: IGBT 600V 110A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 50ns/220ns
Switching Energy: 250µJ (on), 4.2mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 284 W
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Технічний опис STGW50HF60S STMicroelectronics
Description: IGBT 600V 110A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 50ns/220ns, Switching Energy: 250µJ (on), 4.2mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 200 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 130 A, Power - Max: 284 W.
Інші пропозиції STGW50HF60S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STGW50HF60S | Виробник : STMicroelectronics |
 IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces |
товару немає в наявності |