Технічний опис STGW50HF60SD STMicroelectronics
Description: IGBT 600V 110A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 67 ns, Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 50ns/220ns, Switching Energy: 250µJ (on), 4.2mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 200 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 130 A, Power - Max: 284 W.
Інші пропозиції STGW50HF60SD
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STGW50HF60SD | Виробник : STMicroelectronics |
 Description: IGBT 600V 110A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 67 ns Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 50ns/220ns Switching Energy: 250µJ (on), 4.2mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 130 A Power - Max: 284 W |
товару немає в наявності |
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STGW50HF60SD | Виробник : STMicroelectronics |
IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces |
товару немає в наявності |