Технічний опис STGW60H65DF STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 67ns/165ns, Switching Energy: 1.5mJ (on), 1.1mJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 206 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 360 W.
Інші пропозиції STGW60H65DF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
STGW60H65DF | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 67ns/165ns Switching Energy: 1.5mJ (on), 1.1mJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 206 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 360 W |
товару немає в наявності |
|
 |
STGW60H65DF | Виробник : STMicroelectronics |
 IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT |
товару немає в наявності |