Технічний опис STGW60H65DRF STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 19 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 85ns/178ns, Switching Energy: 940µJ (on), 1.06mJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 217 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 420 W.
Інші пропозиції STGW60H65DRF
| Фото | Назва | Виробник | Інформація |
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STGW60H65DRF | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 120A 420W 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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| STGW60H65DRF | Виробник : STMicroelectronics |
STGW60H65DRF THT IGBT transistors |
товару немає в наявності |
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STGW60H65DRF | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 85ns/178ns Switching Energy: 940µJ (on), 1.06mJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 217 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 420 W |
товару немає в наявності |
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STGW60H65DRF | Виробник : STMicroelectronics |
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT |
товару немає в наявності |