STGWA30H60DFB STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT
Power - Max: 260 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 149 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 383µJ (on), 293µJ (off)
Td (on/off) @ 25°C: 37ns/146ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 Long Leads
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Reverse Recovery Time (trr): 53 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис STGWA30H60DFB STMicroelectronics
Description: IGBT, Power - Max: 260 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 60 A, Gate Charge: 149 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 383µJ (on), 293µJ (off), Td (on/off) @ 25°C: 37ns/146ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247 Long Leads, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Reverse Recovery Time (trr): 53 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STGWA30H60DFB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
STGWA30H60DFB | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed |
товару немає в наявності |
