STGWA30H65DFB2 STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGWA30H65DFB2 - IGBT, 50 A, 1.65 V, 167 W, 650 V, TO-247LL, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: TO-247LL
Dauerkollektorstrom: 50A
Anzahl der Pins: 3Pin(s)
Produktpalette: HB2
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 178.80 грн |
| 10+ | 156.25 грн |
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Технічний опис STGWA30H65DFB2 STMICROELECTRONICS
Description: IGBT TRENCH FS 650V 50A TO247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18.4ns/71ns, Switching Energy: 270µJ (on), 310µJ (off), Test Condition: 400V, 30A, 6.8Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 167 W.
Інші пропозиції STGWA30H65DFB2 за ціною від 118.13 грн до 267.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STGWA30H65DFB2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 50A TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18.4ns/71ns Switching Energy: 270µJ (on), 310µJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 167 W |
на замовлення 364 шт: термін постачання 21-31 дні (днів) |
|
| STGWA30H65DFB2 |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18.4ns/71ns
Switching Energy: 270µJ (on), 310µJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 167 W
Description: IGBT TRENCH FS 650V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18.4ns/71ns
Switching Energy: 270µJ (on), 310µJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 167 W
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.16 грн |
| 10+ | 168.64 грн |
| 100+ | 118.13 грн |