STGWA30M65DF2 STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 80 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 300µJ (on), 960µJ (off)
Td (on/off) @ 25°C: 31.6ns/115ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 Long Leads
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 258 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.17 грн |
| 30+ | 133.47 грн |
| 120+ | 108.80 грн |
| 510+ | 85.11 грн |
| 1020+ | 78.90 грн |
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Технічний опис STGWA30M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247, Current - Collector (Ic) (Max): 60 A, Part Status: Active, Gate Charge: 80 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 300µJ (on), 960µJ (off), Td (on/off) @ 25°C: 31.6ns/115ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247 Long Leads, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Reverse Recovery Time (trr): 140 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 258 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V.
Інші пропозиції STGWA30M65DF2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STGWA30M65DF2 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWA30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.55V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 258W Bauform - Transistor: TO-247 Dauerkollektorstrom: 60A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| STGWA30M65DF2 |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGWA30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 258W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STGWA30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 258W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 71 шт:
термін постачання 21-31 дні (днів)