STGWA30M65DF2 STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGWA30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 258W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 6+ | 156.12 грн |
| 10+ | 136.61 грн |
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Технічний опис STGWA30M65DF2 STMICROELECTRONICS
Description: IGBT TRENCH FS 650V 60A TO247, Current - Collector (Ic) (Max): 60 A, Part Status: Active, Gate Charge: 80 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 300µJ (on), 960µJ (off), Td (on/off) @ 25°C: 31.6ns/115ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247 Long Leads, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Reverse Recovery Time (trr): 140 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 258 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V.
Інші пропозиції STGWA30M65DF2 за ціною від 87.44 грн до 257.97 грн
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STGWA30M65DF2 | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO247 Current - Collector (Ic) (Max): 60 A Part Status: Active Gate Charge: 80 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 300µJ (on), 960µJ (off) Td (on/off) @ 25°C: 31.6ns/115ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247 Long Leads Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Reverse Recovery Time (trr): 140 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 258 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 577 шт: термін постачання 21-31 дні (днів) |
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STGWA30M65DF2 | Виробник : STMicroelectronics |
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss |
товару немає в наявності |