STGWA80H65FB STMicroelectronics
| Кількість | Ціна |
|---|---|
| 1+ | 428.84 грн |
| 10+ | 294.94 грн |
| 100+ | 208.25 грн |
| 600+ | 148.15 грн |
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Технічний опис STGWA80H65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.
Інші пропозиції STGWA80H65FB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STGWA80H65FB | Виробник : STMicroelectronics |
 Description: IGBT TRENCH FS 650V 120A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 84ns/280ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 414 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 469 W |
товару немає в наявності |
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| STGWA80H65FB | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 469W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 80A Gate-emitter voltage: ±20V Power dissipation: 469W Pulsed collector current: 240A Collector-emitter voltage: 650V Type of transistor: IGBT Gate charge: 414nC |
товару немає в наявності |