STGWT15H60F STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-3P
Packaging: Tube
Power - Max: 115 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 81 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Switching Energy: 136µJ (on), 207µJ (off)
Td (on/off) @ 25°C: 24.5ns/118ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
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Технічний опис STGWT15H60F STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-3P, Packaging: Tube, Power - Max: 115 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 30 A, Gate Charge: 81 nC, Test Condition: 400V, 15A, 10Ohm, 15V, Switching Energy: 136µJ (on), 207µJ (off), Td (on/off) @ 25°C: 24.5ns/118ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3.
Інші пропозиції STGWT15H60F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STGWT15H60F | Виробник : STMicroelectronics |
 IGBT Transistors PTD IGBT & IPM |
товару немає в наявності |