Технічний опис STGWT30HP65FB STMicroelectronics
Description: IGBT TRENCH 650V 60A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/146ns, Switching Energy: 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Інші пропозиції STGWT30HP65FB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STGWT30HP65FB | Виробник : STMicroelectronics |
 STGWT30HP65FB THT IGBT transistors |
товару немає в наявності |
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| STGWT30HP65FB | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 260mW 3-Pin(3+Tab) TO-3P Tube |
товару немає в наявності |
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STGWT30HP65FB | Виробник : STMicroelectronics |
Description: IGBT TRENCH 650V 60A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/146ns Switching Energy: 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товару немає в наявності |
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| STGWT30HP65FB | Виробник : STMicroelectronics |
RF Bipolar Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT |
товару немає в наявності |