Технічний опис STGWT30HP65FB STM
Description: IGBT TRENCH FS 650V 60A TO-3P, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Part Status: Active, Gate Charge: 149 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 293µJ (off), Td (on/off) @ 25°C: -/146ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Reverse Recovery Time (trr): 140 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Power - Max: 260 W.
Інші пропозиції STGWT30HP65FB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STGWT30HP65FB | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO-3PMounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Active Gate Charge: 149 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 293µJ (off) Td (on/off) @ 25°C: -/146ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3P Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Reverse Recovery Time (trr): 140 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 260 W |
товару немає в наявності |
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| STGWT30HP65FB | Виробник : STMicroelectronics |
RF Bipolar Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT |
товару немає в наявності |

