STGWT40H65DFB STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGWT40H65DFB - IGBT, 80 A, 1.6 V, 283 W, 650 V, TO-3P, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.6V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 283W
Bauform - Transistor: TO-3P
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: 650V HB
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 4+ | 234.18 грн |
| 10+ | 204.91 грн |
| 100+ | 169.95 грн |
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Технічний опис STGWT40H65DFB STMICROELECTRONICS
Description: IGBT TRENCH FS 650V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/142ns, Switching Energy: 498µJ (on), 363µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
Інші пропозиції STGWT40H65DFB за ціною від 222.32 грн до 312.61 грн
| Фото | Назва | Виробник | Інформація |
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STGWT40H65DFB | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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STGWT40H65DFB | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 650V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/142ns Switching Energy: 498µJ (on), 363µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
товару немає в наявності |
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STGWT40H65DFB | Виробник : STMicroelectronics |
IGBTs 650V 40A HSpd trench gate field-stop IGB |
товару немає в наявності |