Технічний опис STGWT40V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 52ns/208ns, Switching Energy: 456µJ (on), 411µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 226 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
Інші пропозиції STGWT40V60DF
| Фото | Назва | Виробник | Інформація |
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Ціна |
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STGWT40V60DF | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube |
товару немає в наявності |
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STGWT40V60DF | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 52ns/208ns Switching Energy: 456µJ (on), 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
товару немає в наявності |
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STGWT40V60DF | Виробник : STMicroelectronics |
IGBT Transistors 600V 40A High Speed Trench Gate IGBT |
товару немає в наявності |