Технічний опис STGWT60H60DLFB STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/160ns, Switching Energy: 626µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 306 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Інші пропозиції STGWT60H60DLFB
| Фото | Назва | Виробник | Інформація |
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STGWT60H60DLFB | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/160ns Switching Energy: 626µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 306 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
товару немає в наявності |
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STGWT60H60DLFB | Виробник : STMicroelectronics |
 IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT |
товару немає в наявності |