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STGWT60H60DLFB

STGWT60H60DLFB STMicroelectronics

Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/160ns
Switching Energy: 626µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 306 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
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Технічний опис STGWT60H60DLFB STMicroelectronics

Description: IGBT TRENCH FS 600V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/160ns, Switching Energy: 626µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 306 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.

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STGWT60H60DLFB STGWT60H60DLFB Виробник : STMicroelectronics dm00080369-1797706.pdf IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT
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