STGWT60H60DLFB STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 375 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 306 nC
Test Condition: 400V, 60A, 5Ohm, 15V
Switching Energy: 626µJ (off)
Td (on/off) @ 25°C: -/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
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Технічний опис STGWT60H60DLFB STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Power - Max: 375 W, Current - Collector Pulsed (Icm): 240 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 306 nC, Test Condition: 400V, 60A, 5Ohm, 15V, Switching Energy: 626µJ (off), Td (on/off) @ 25°C: -/160ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A.
Інші пропозиції STGWT60H60DLFB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STGWT60H60DLFB | Виробник : STMicroelectronics |
 IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT |
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