STGWT80H65DFB STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
| Кількість | Ціна |
|---|---|
| 1+ | 490.85 грн |
| 30+ | 271.44 грн |
| 120+ | 227.15 грн |
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Технічний опис STGWT80H65DFB STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.
Інші пропозиції STGWT80H65DFB за ціною від 315.50 грн до 548.87 грн
| Фото | Назва | Виробник | Інформація |
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STGWT80H65DFB | Виробник : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWT80H65DFB - IGBT, 120 A, 1.6 V, 469 W, 650 V, TO-3P, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 469W Bauform - Transistor: TO-3P Dauerkollektorstrom: 120A Anzahl der Pins: 3Pin(s) Produktpalette: HB Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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STGWT80H65DFB | Виробник : STMicroelectronics |
IGBTs Trench gate H series 650V 80A HiSpd |
товару немає в наявності |
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| STGWT80H65DFB | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 470W; TO3P Mounting: THT Case: TO3P Kind of package: tube Collector current: 80A Gate-emitter voltage: ±20V Power dissipation: 470W Pulsed collector current: 300A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 414nC |
товару немає в наявності |