Технічний опис STGWT80V60F STMicroelectronics
Description: IGBT 600V 120A 469W TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 60ns/220ns, Switching Energy: 1.8mJ (on), 1mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 448 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.
Інші пропозиції STGWT80V60F
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STGWT80V60F Код товару: 172729
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 Транзистори > IGBT |
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| STGWT80V60F | Виробник : STMicroelectronics |
STGWT80V60F THT IGBT transistors |
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STGWT80V60F | Виробник : STMicroelectronics |
Description: IGBT 600V 120A 469W TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 60ns/220ns Switching Energy: 1.8mJ (on), 1mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 448 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 469 W |
товару немає в наявності |