STH10N80K5-2AG STMicroelectronics
Виробник: STMicroelectronicsMOSFETs Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a
на замовлення 1254 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 325.38 грн |
| 10+ | 213.28 грн |
| 100+ | 132.47 грн |
| 500+ | 124.11 грн |
| 1000+ | 109.47 грн |
Відгуки про товар
Написати відгук
Технічний опис STH10N80K5-2AG STMicroelectronics
Description: MOSFET N-CH 800V 8A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V, Power Dissipation (Max): 121W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STH10N80K5-2AG за ціною від 125.73 грн до 339.64 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STH10N80K5-2AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 800V 8A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
STH10N80K5-2AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 800V 8A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |