STH110N7F6-2 STMicroelectronics

Description: MOSFET N-CH 68V 80A H2PAK-2, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 68 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).