STH12N120K5-2AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
| Кількість | Ціна |
|---|---|
| 1+ | 839.67 грн |
| 10+ | 670.63 грн |
| 100+ | 485.62 грн |
| 500+ | 441.72 грн |
| 1000+ | 404.80 грн |
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Технічний опис STH12N120K5-2AG STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 1200, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції STH12N120K5-2AG за ціною від 568.43 грн до 846.52 грн
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STH12N120K5-2AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 1200 Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
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STH12N120K5-2AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 1200 Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |