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STH12N120K5-2AG

STH12N120K5-2AG STMicroelectronics

sth12n120k5_2ag-3082514.pdf Виробник: STMicroelectronics
MOSFET Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
на замовлення 1000 шт:
термін постачання 414-423 дні (днів)
Кількість Ціна без ПДВ
1+823.02 грн
10+ 715.77 грн
25+ 604.47 грн
50+ 571.26 грн
100+ 537.38 грн
250+ 520.78 грн
500+ 487.57 грн
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Технічний опис STH12N120K5-2AG STMicroelectronics

Description: AUTOMOTIVE-GRADE N-CHANNEL 1200, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V.

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STH12N120K5-2AG Виробник : STMicroelectronics sth12n120k5-2ag.pdf Trans MOSFET N-CH 1.2KV 7A Automotive AEC-Q101 3-Pin(2+Tab) H2PAK T/R
товар відсутній
STH12N120K5-2AG STH12N120K5-2AG Виробник : STMicroelectronics sth12n120k5-2ag.pdf Description: AUTOMOTIVE-GRADE N-CHANNEL 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
товар відсутній
STH12N120K5-2AG STH12N120K5-2AG Виробник : STMicroelectronics sth12n120k5-2ag.pdf Description: AUTOMOTIVE-GRADE N-CHANNEL 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
товар відсутній