STH175N4F6-2AG STMicroelectronics
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 39.79 грн |
| 20+ | 39.16 грн |
| 25+ | 38.52 грн |
| 50+ | 36.53 грн |
| 100+ | 33.26 грн |
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Технічний опис STH175N4F6-2AG STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції STH175N4F6-2AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STH175N4F6-2AG | STMicroelectronics |
Description: MOSFET N-CH 40V 120A H2PAK-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
STH175N4F6-2AG | STMicroelectronics |
 MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ 120 A STripFET F6 Power MOSFET in |
товару немає в наявності |
В кошику од. на суму грн. |
| STH175N4F6-2AG |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 40V 120A H2PAK-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH175N4F6-2AG |
|
Виробник: STMicroelectronics
MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ 120 A STripFET F6 Power MOSFET in
MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ 120 A STripFET F6 Power MOSFET in
товару немає в наявності
В кошику
од. на суму грн.