STH245N75F3-6 STMicroelectronics
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 153.85 грн |
| 10+ | 151.46 грн |
| 25+ | 149.09 грн |
| 50+ | 141.47 грн |
| 100+ | 128.86 грн |
| 250+ | 121.76 грн |
| 500+ | 119.72 грн |
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Технічний опис STH245N75F3-6 STMicroelectronics
Description: MOSFET N-CH 75V 180A H2PAK-6, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: H2PAK-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR).
Інші пропозиції STH245N75F3-6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STH245N75F3-6 | STMicroelectronics |
 Description: MOSFET N-CH 75V 180A H2PAK-6Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
STH245N75F3-6 | STMicroelectronics |
MOSFET Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package |
товару немає в наявності |
В кошику од. на суму грн. |
| STH245N75F3-6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 75V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH245N75F3-6 |
|
Виробник: STMicroelectronics
MOSFET Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
MOSFET Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
товару немає в наявності
В кошику
од. на суму грн.