| Кількість | Ціна |
|---|---|
| 1+ | 347.08 грн |
| 10+ | 227.55 грн |
| 100+ | 140.74 грн |
| 500+ | 133.07 грн |
| 1000+ | 124.71 грн |
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Технічний опис STH320N4F6-6 STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-6, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: H2PAK-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab).
Інші пропозиції STH320N4F6-6 за ціною від 152.75 грн до 366.83 грн
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STH320N4F6-6 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 40V 200A H2PAK-6Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V |
на замовлення 915 шт: термін постачання 21-31 дні (днів) |
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STH320N4F6-6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 200A H2PAK-6 Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) |
товару немає в наявності |