STH320N4F6-6 STMicroelectronics

Description: MOSFET N-CH 40V 200A H2PAK-6, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: H2PAK-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab).