Технічний опис STH52N10LF3-2AG STMicroelectronics
Description: MOSFET N-CH 100V 52A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 26A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: H2Pak-2, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V.
Інші пропозиції STH52N10LF3-2AG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
|
STH52N10LF3-2AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 100V 52A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 26A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V |
товару немає в наявності |
|
STH52N10LF3-2AG | Виробник : STMicroelectronics |
![]() |
товару немає в наявності |