Технічний опис STH80N10LF7-2AG STMicroelectronics
Description: MOSFET N-CH 100V 80A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V, Power Dissipation (Max): 110W (Tc), Supplier Device Package: H2Pak-2, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STH80N10LF7-2AG
| Фото | Назва | Виробник | Інформація |
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Ціна |
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STH80N10LF7-2AG | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) H2PAK T/R |
товару немає в наявності |
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STH80N10LF7-2AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 100V 80A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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STH80N10LF7-2AG | Виробник : STMicroelectronics |
MOSFETs N-channel 100 V, 0.008 Ohm typ 80 A STripFET F7 Power MOSFET in H2PAK-2 package |
товару немає в наявності |