STHU32N65DM6AG STMicroelectronics
Виробник: STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: HU3PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 600+ | 194.98 грн |
Відгуки про товар
Написати відгук
Технічний опис STHU32N65DM6AG STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: HU3PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STHU32N65DM6AG за ціною від 183.82 грн до 334.81 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STHU32N65DM6AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: HU3PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
STHU32N65DM6AG | Виробник : STMicroelectronics |
MOSFETs Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in |
товару немає в наявності |