STI24N60M6 STMicroelectronics
Виробник: STMicroelectronics
MOSFETs N-channel 600 V, 162 mOhm typ 17 A MDmesh M6 Power MOSFET in an I2PAK package
| Кількість | Ціна |
|---|---|
| 2+ | 248.82 грн |
| 10+ | 160.30 грн |
| 100+ | 106.64 грн |
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Технічний опис STI24N60M6 STMicroelectronics
Description: MOSFET N-CH 600V I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tj), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.
Інші пропозиції STI24N60M6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STI24N60M6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tj) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
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