Технічний опис STI260N6F6 STMicroelectronics
Description: MOSFET N-CH 75V 120A I2PAK, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA.
Інші пропозиції STI260N6F6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STI260N6F6 | STMicroelectronics |
 Description: MOSFET N-CH 75V 120A I2PAKPower Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STI260N6F6 | STMicroelectronics |
MOSFET N-ch 60V 0.0024 Ohm 120 A STripFET VI |
товару немає в наявності |
В кошику од. на суму грн. |
| STI260N6F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A I2PAK
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: MOSFET N-CH 75V 120A I2PAK
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.
| STI260N6F6 |
|
Виробник: STMicroelectronics
MOSFET N-ch 60V 0.0024 Ohm 120 A STripFET VI
MOSFET N-ch 60V 0.0024 Ohm 120 A STripFET VI
товару немає в наявності
В кошику
од. на суму грн.