Технічний опис STK224N4F7AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STK224N4F7AG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STK224N4F7AG | Виробник : STMicroelectronics |
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товару немає в наявності |
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STK224N4F7AG | Виробник : STMicroelectronics |
![]() |
товару немає в наявності |
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STK224N4F7AG | Виробник : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
||
STK224N4F7AG | Виробник : STMicroelectronics |
![]() |
товару немає в наявності |