STK615N4F8AG STMicroelectronics
Виробник: STMicroelectronics
Description: AUTOMOTIVE N CHANNEL 40V .48MOHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerLeaded (8x8)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
| Кількість | Ціна |
|---|---|
| 1+ | 384.99 грн |
| 10+ | 247.21 грн |
| 100+ | 177.33 грн |
| 500+ | 161.75 грн |
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Технічний опис STK615N4F8AG STMicroelectronics
Description: AUTOMOTIVE N CHANNEL 40V .48MOHM, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerSFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerLeaded (8x8), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 390W (Tc), Rds On (Max) @ Id, Vgs: 0.48mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції STK615N4F8AG
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STK615N4F8AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE N CHANNEL 40V .48MOHM Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerSFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerLeaded (8x8) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |