STL059N4S8AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive N-channel logic level 40 V, 0.59 mOhm max., 420 A Smart STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
| Кількість | Ціна |
|---|---|
| 2+ | 261.02 грн |
| 10+ | 167.52 грн |
| 3000+ | 145.67 грн |
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Технічний опис STL059N4S8AG STMicroelectronics
Description: AUTOMOTIVE N-CHANNEL LOGIC LEVEL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Rds On (Max) @ Id, Vgs: 0.59mOhm @ 60A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STL059N4S8AG
| Фото | Назва | Виробник | Інформація |
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STL059N4S8AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE N-CHANNEL LOGIC LEVEL Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 0.59mOhm @ 60A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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STL059N4S8AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE N-CHANNEL LOGIC LEVEL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 0.59mOhm @ 60A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |