STL100N8F7 STMicroelectronics
Виробник: STMicroelectronics
MOSFETs N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
| Кількість | Ціна |
|---|---|
| 2+ | 215.85 грн |
| 10+ | 128.61 грн |
| 100+ | 80.77 грн |
| 500+ | 67.65 грн |
| 1000+ | 65.31 грн |
| 3000+ | 61.16 грн |
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Технічний опис STL100N8F7 STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V.
Інші пропозиції STL100N8F7
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT |
|---|---|---|---|---|---|
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STL100N8F7 | STMicroelectronics |
Description: MOSFET N-CH 80V 100A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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STL100N8F7 | STMicroelectronics |
Description: MOSFET N-CH 80V 100A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. |
| STL100N8F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STL100N8F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.