STL105N8F7AG STMicroelectronics
Виробник: STMicroelectronics
Description: AUTOMOTIVE N-CHANNEL 80 V, 5.6 M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3475 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2+ | 171.66 грн |
| 10+ | 106.12 грн |
| 100+ | 72.72 грн |
| 500+ | 54.84 грн |
| 1000+ | 54.69 грн |
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Технічний опис STL105N8F7AG STMicroelectronics
Description: AUTOMOTIVE N-CHANNEL 80 V, 5.6 M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V, Power Dissipation (Max): 127W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3475 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STL105N8F7AG за ціною від 61.94 грн до 207.28 грн
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STL105N8F7AG | Виробник : STMicroelectronics |
MOSFETs Automotive N-channel 80 V, 5.6 mOhm typ., 95 A, STripFET F7 Power MOSFET |
на замовлення 1943 шт: термін постачання 21-30 дні (днів) |
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STL105N8F7AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE N-CHANNEL 80 V, 5.6 M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3475 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |