STL110NS3LLH7 STMicroelectronics
Виробник: STMicroelectronicsMOSFET N-channel 30 V, 0.0027 Ohm typ., 28 A STripFET(TM) VII DeepGATE(TM) Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6
на замовлення 2558 шт:
термін постачання 21-30 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис STL110NS3LLH7 STMicroelectronics
Description: MOSFET N-CH 30V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V, Power Dissipation (Max): 4W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V.
Інші пропозиції STL110NS3LLH7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
STL110NS3LLH7 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V |
товару немає в наявності |
|
|
|
STL110NS3LLH7 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 120A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V |
товару немає в наявності |