STL11N65M5 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
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Технічний опис STL11N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 8.5A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 4.25A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFLAT™ (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V.
Інші пропозиції STL11N65M5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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STL11N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 8.5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 4.25A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFLAT™ (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STL11N65M5 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.475 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 |
товару немає в наявності |
В кошику од. на суму грн. |
| STL11N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 8.5A; Idm: 34A; 70W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 8.5A Power dissipation: 70W Case: PowerFLAT 5x5 Gate-source voltage: ±25V On-state resistance: 530mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17nC Pulsed drain current: 34A |
товару немає в наявності |
В кошику од. на суму грн. |
| STL11N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
Description: MOSFET N-CH 650V 8.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STL11N65M5 |
|
Виробник: STMicroelectronics
MOSFETs N-channel 650 V, 0.475 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5
MOSFETs N-channel 650 V, 0.475 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5
товару немає в наявності
В кошику
од. на суму грн.
| STL11N65M5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 8.5A; Idm: 34A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 8.5A
Power dissipation: 70W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 34A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 8.5A; Idm: 34A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 8.5A
Power dissipation: 70W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 34A
товару немає в наявності
В кошику
од. на суму грн.