STL120N4F6AG STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 55A POWERFLAT
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 127.02 грн |
| 10+ | 87.96 грн |
| 100+ | 70.89 грн |
| 500+ | 56.57 грн |
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Технічний опис STL120N4F6AG STMicroelectronics
Description: MOSFET N-CH 40V 55A POWERFLAT, Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції STL120N4F6AG за ціною від 47.67 грн до 137.42 грн
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STL120N4F6AG | Виробник : STMicroelectronics |
MOSFETs Automotive-grade N-channel 40 V, 2.9 mOhm typ., 55 A STripFET F6 Power MOSFET in |
на замовлення 2083 шт: термін постачання 21-30 дні (днів) |
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STL120N4F6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 55A POWERFLAT Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
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| STL120N4F6AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 115W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Power dissipation: 115W Case: PowerFLAT 5x6 On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 63nC Kind of channel: enhancement Application: automotive industry Pulsed drain current: 220A Kind of package: reel; tape Gate-source voltage: ±20V |
товару немає в наявності |