Технічний опис STL13DP10F6 STMicroelectronics
Description: MOSFET 2P-CH 100V 13A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 62.5W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 13A, Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Obsolete.
Інші пропозиції STL13DP10F6
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
STL13DP10F6 | Виробник : STMicroelectronics |
Description: MOSFET 2P-CH 100V 13A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Obsolete |
товару немає в наявності |