STL180N6F7 STMicroelectronics

Description: MOSFET N-CH 60V 32A/120A PWRFLAT, Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4.8W (Ta), 166W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).