STL18N55M5 STMicroelectronics

Description: MOSFET N-CH 550V 2.4A POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3W (Ta), 90W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).