STL190N4F7AG STMicroelectronics

Description: MOSFET N-CH 40V 120A POWERFLAT, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 127W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).