STL20DNF06LAG STMicroelectronics
Виробник: STMicroelectronics
MOSFET Automotive-grade dual N-channel 60 V, 27 mOhm typ., 20 A STripFET II Power MOSFET in a PowerFLAT 5x6 DI package
Відгуки про товар
Написати відгук
Технічний опис STL20DNF06LAG STMicroelectronics
Description: MOSFET 2N-CH 60V 20A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STL20DNF06LAG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| STL20DNF06LAG | STMicroelectronics |
Description: MOSFET 2N-CH 60V 20A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| STL20DNF06LAG |
![]() |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.


