STL225N6F7AG STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1839 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 222.29 грн |
10+ | 179.85 грн |
100+ | 145.47 грн |
500+ | 121.35 грн |
1000+ | 103.91 грн |
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Технічний опис STL225N6F7AG STMicroelectronics
Description: MOSFET N-CH 60V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STL225N6F7AG за ціною від 195.25 грн до 309.04 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STL225N6F7AG | Виробник : STMicroelectronics | MOSFET Automotive 60V N-Ch 12mOhm 120A F7 Power |
на замовлення 2925 шт: термін постачання 385-394 дні (днів) |
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STL225N6F7AG | Виробник : STMicroelectronics | STL225N6F7AG SMD N channel transistors |
товар відсутній |
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STL225N6F7AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 60V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |