Технічний опис STL22N60DM6 STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 6.5A, 10V, Power Dissipation (Max): 102W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V.
Інші пропозиції STL22N60DM6
Фото | Назва | Виробник | Інформація |
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STL22N60DM6 | Виробник : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 42A; 102W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 42A Power dissipation: 102W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 265mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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STL22N60DM6 | Виробник : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 6.5A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
товару немає в наявності |
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STL22N60DM6 | Виробник : STMicroelectronics |
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товару немає в наявності |
|
STL22N60DM6 | Виробник : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 42A; 102W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 42A Power dissipation: 102W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 265mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |