STL23NS3LLH7

STL23NS3LLH7 STMicroelectronics


en.DM00091911-1223437.pdf
Виробник: STMicroelectronics
MOSFET N-channel 30 V, 0.0027 Ohm typ., 23 A STripFET(TM) VII DeepGATE(TM) Power MOSFET plus monolithic Schottky in a PowerFLAT(TM) 3.3 x 3.3
на замовлення 3000 шт:

термін постачання 21-30 дні (днів)
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Технічний опис STL23NS3LLH7 STMicroelectronics

Description: MOSFET N-CH 30V 92A POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PowerFlat™ (3.3x3.3), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Power Dissipation (Max): 2.9W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

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STL23NS3LLH7 STL23NS3LLH7 Виробник : STMicroelectronics en.DM00091911.pdf Description: MOSFET N-CH 30V 92A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
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STL23NS3LLH7 STL23NS3LLH7 Виробник : STMicroelectronics en.DM00091911.pdf Description: MOSFET N-CH 30V 92A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.