STL33N60M2 STMicroelectronics
на замовлення 2284 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 408.42 грн |
| 3000+ | 149.39 грн |
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Технічний опис STL33N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 22A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V.
Інші пропозиції STL33N60M2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STL33N60M2 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 600V 22A 5-Pin Power Flat T/R |
товару немає в наявності |
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| STL33N60M2 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 22A 5-Pin Power Flat T/R |
товару немає в наявності |
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| STL33N60M2 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 88A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 45.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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STL33N60M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 22A PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V |
товару немає в наявності |
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STL33N60M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 22A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V |
товару немає в наявності |
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| STL33N60M2 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 88A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 45.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |