Технічний опис STL33N60M6 STMicroelectronics
Description: MOSFET 600V 21A POWERFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V.
Інші пропозиції STL33N60M6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STL33N60M6 | Виробник : STMicroelectronics |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 78A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 78A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 137mΩ Mounting: SMD Gate charge: 33.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
||
 |
STL33N60M6 | Виробник : STMicroelectronics |
Description: MOSFET 600V 21A POWERFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V |
товару немає в наявності |
|
 |
STL33N60M6 | Виробник : STMicroelectronics |
MOSFETs N-channel 600 V, 115 mOhm typ 21 A MDmesh M6 Power MOSFET |
товару немає в наявності |
|
| STL33N60M6 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 78A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 78A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 137mΩ Mounting: SMD Gate charge: 33.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |