STL3N65M2 STMicroelectronics
| Кількість | Ціна |
|---|---|
| 7+ | 48.11 грн |
| 10+ | 38.15 грн |
| 100+ | 24.41 грн |
| 3000+ | 22.25 грн |
| 6000+ | 21.77 грн |
| 9000+ | 21.70 грн |
| 24000+ | 20.72 грн |
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Технічний опис STL3N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 2.3A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V.
Інші пропозиції STL3N65M2 за ціною від 27.15 грн до 100.92 грн
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STL3N65M2 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 650V 2.3A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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STL3N65M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 2.3A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V |
товару немає в наявності |