STL45N10F7AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 100 V, 20 mOhm typ 18 A STripFET F7 Power MOSFET
| Кількість | Ціна |
|---|---|
| 3+ | 125.22 грн |
| 10+ | 90.57 грн |
| 100+ | 55.13 грн |
| 500+ | 44.96 грн |
| 1000+ | 41.68 грн |
| 3000+ | 40.15 грн |
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Технічний опис STL45N10F7AG STMicroelectronics
Description: MOSFET N-CH 100V 18A POWERFLAT, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 72W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції STL45N10F7AG за ціною від 39.80 грн до 136.43 грн
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STL45N10F7AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 100V 18A POWERFLAT Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 72W (Tc) Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V |
на замовлення 2114 шт: термін постачання 21-31 дні (днів) |
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STL45N10F7AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 100V 18A POWERFLAT Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
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| STL45N10F7AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 72A; 72W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 72W Case: PowerFLAT 5x6 On-state resistance: 24mΩ Mounting: SMD Gate charge: 19.5nC Kind of channel: enhancement Application: automotive industry Pulsed drain current: 72A Kind of package: reel; tape Gate-source voltage: ±20V |
товару немає в наявності |