STL45N60DM6 STMicroelectronics
на замовлення 2762 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 524.05 грн |
| 10+ | 383.88 грн |
| 25+ | 333.08 грн |
| 100+ | 253.98 грн |
| 500+ | 220.60 грн |
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Технічний опис STL45N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 25A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V.
Інші пропозиції STL45N60DM6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STL45N60DM6 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 600V 25A 5-Pin Power Flat EP T/R |
товару немає в наявності |
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| STL45N60DM6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 25A 5-Pin Power Flat EP T/R |
товару немає в наявності |
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| STL45N60DM6 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 95A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Case: PowerFLAT 8x8 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 95A Drain current: 25A Power dissipation: 160W Gate-source voltage: ±25V кількість в упаковці: 1 шт |
товару немає в наявності |
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STL45N60DM6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 25A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
товару немає в наявності |
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STL45N60DM6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 25A PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
товару немає в наявності |
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| STL45N60DM6 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 95A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Case: PowerFLAT 8x8 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 95A Drain current: 25A Power dissipation: 160W Gate-source voltage: ±25V |
товару немає в наявності |