STL50DN6F7 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
| Кількість | Ціна |
|---|---|
| 3000+ | 41.00 грн |
| 6000+ | 37.76 грн |
Відгуки про товар
Написати відгук
Технічний опис STL50DN6F7 STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 62.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V, Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active.
Інші пропозиції STL50DN6F7 за ціною від 39.52 грн до 126.04 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STL50DN6F7 | Виробник : STMicroelectronics |
Description: MOSFET 2N-CH 60V 57A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active |
на замовлення 6104 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
STL50DN6F7 | Виробник : STMicroelectronics |
MOSFETs Dual N-channel 60 V, 9 mOhm typ 57 A STripFET F7 Power MOSFET |
на замовлення 6212 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| STL50DN6F7 | Виробник : STMicroelectronics |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 57A; Idm: 228A; 62.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 57A Power dissipation: 62.5W Case: PowerFLAT 5x6 On-state resistance: 11mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement Pulsed drain current: 228A Kind of package: reel; tape Gate-source voltage: ±20V |
на замовлення 2886 шт: термін постачання 14-30 дні (днів) |
|